unisonic technologies co., ltd utp45n02 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2008 unisonic technologies co., ltd qw-r502-180.a n-channel enhancement mode ? description as n-channel power mosfets the utp45n02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ? features * 45a, 20v * r ds(on) = 0.022 ? * temperature compensating pspice model * be driven directly from cmos, nmos, and ttl circuits * peak current vs. pulse width curve ? symbol 1.gate 3.source 2.drain *pb-free plating product number: utp45n02l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing utp45n02-tn3-r UTP45N02L-TN3-R to-252 g d s tape reel utp45n02-tn3-t utp45n02l-tn3-t to-252 g d s tube
utp45n02 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-180.a ? absolute maximum ratings (ta = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 10 v continuous drain current i d 45 a 90 w power dissipation derate above 25 p d 0.606 w/ junction temperature t j +175 storage temperature t stg -55 ~ +175 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient ja 80 /w
junction to case jc 1.65 /w
? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs =0v, i d =250 a 20 v zero gate voltage drain current i dss v ds =20v, v gs =0 v 1 a gate-to-source leakage current i gss v gs = 10 v 100 na on characteristics gate to source threshold voltage v gs(th) v ds =v gs , i d =250 a 1 2 v drain-to-source on resistance r ds(on) v gs = 5v, i d =45 a 0.022 ? dynamic parameters input capacitance c iss 1300 output capacitance c oss 724 reverse transfer capacitance c rss v ds =15 v, v gs =0v, f=1mhz 250 pf switching parameters turn-on time t on 260 turn-on delay time t d(on) 15 turn-on rise time t r 160 turn-off delay time t d(off) 20 turn-off fall-time t f 20 turn-off time t off v gs =5 v, v dd =15 v, i d ? 45 a, r gs = 5 $ , r l = 0.33 $ 60 ns total gate charge q g v gs =0v~10v 50 60 gate-source charge q gs v gs =0v ~ 5 v 30 36 gate-drain charge q gd v gs =0v~ 1 v v dd = 16v, i d ? 45a, r l = 0.35 ? 1.5 1.8 nc source-drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =45 a 1.5 v reverse recovery time t rr i sd = 45 a,di sd /dt = 100 a/ s 125 ns
utp45n02 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-180.a ? typical characteristics on-state drain current,i d(on) (a) drain current,i d (a) normalized on resistance drain to source on resistance,r ds(on) (m $ ) 50 40 30 20 10 0 25 50 75 100 125 150 175 case temperature,t c ( ) drain current,i d (a) maximum continuous drain current vs case temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 normalized power dissipation vs temperature derating power dissipation multiplier case temperature,t c ( )
utp45n02 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-180.a ? typical characteristics(cont.) switching time (ns) avalanche current,i as (a) i d =250 0 a 2.0 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 normalized drain to source breakdown voltage vs junction temperature v gs =v ds ,i d =250 0 a 2.0 1.5 1.0 0.5 0 -80 -40 040 80 120 160 200 normalized gate threshold voltage vs junction temperature junction temperature,t j ( ) normalized gate threhold voltage normalized drain to source breakdown voltage junction temperature,t j ( ) c iss c oss c rss v gs =0v,f=1mh z 20 15 10 5 0 0 500 1000 1500 2000 2500 capacitance,c (pf) drain to source voltage,v ds (v) capacitance vs. drain to source voltage 20 15 10 5 00 1.25 2.50 3.75 5.00 time,t ( 0 s) gate to source voltage,v gs (v) normalized switching waveforms for constant gate current drain to source voltage,v ds (v) v dd =bv dss v dd =bv dss r l =0.44 $ i g(ref) =0.5ma v gs =5v plateau voltage in descending order: v dd =bv dss v dd =0.75bv dss v dd =0.50bv dss v dd =0.25bv dss g(ref) g(act) 20 80 g(ref) g(act)
utp45n02 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-180.a ? typical characteristics(cont.) drain current,i d (a) peak current,i dm (a) normalized thermal impedance,z , jc utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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